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Full text of "USPTO Patents Application 10078831"

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05/17/02 16:23 ©937 223 0724 KILLWORTH ET AL 12)015/01 



123 C 



Attorney Docket MIO 001SV2/964 138.03 

CLAIMS 

\ . A semiconductor de|rice precursor comprising: 

jUj; w{ ^ substrate; I 

a layer of dielectric material formed on at least a portion of said substrate; 

1 

a layer of conductivelmaterial formed within said layer of dielectric material; and 
S a layer of hard mask material formed on at least a portion of said layer of dielectric 

material; at least a portion of said layer of dielectric material and said layer of hard mask material 
each having openings therein defining a via, said via exposing at least a portion of said layer of 
conductive material; said layer|of dielectric matmal including a pair of shoulders having hard 
mask material thereon, and saiduayer of hard mask materia] having a pair of facets. 

10 2. A semiconductor device pjrecursor as claimed in claim 1 in which said layer of hard mask 
material includes a layer of etch rl^istant material thereon. 

3. A semiconductor device precursor as claimed in claim 1 wherein said hard mask material 
is selected from the group consistin^f tungsten, tungsten siUcide, polycrystalline silicon, 
titanium, titanium nitride, titaniiun siUcide, and titanium-tungsten alloys. 



15 4. A semiconductor precursor device as claimed in claim 1, wherein said layer of conductive 
matter contacts at least a portion of saidlsubstrate. 

\ 

A semiconductor device precursor \Comprising: 
a substrate; ^ 

a layer of dielectric material formed Q|ri at least a portion of said substrate; 
20 a layer of conductive material fomied within said layer of dielectric material; 

a layer of hard mask material formed oit^at least a portion of said layer of dielectric 
material; at least a portion of said layer of dielectric material and said layer of hard mask material 
each having openings therein defining a via, said via exposing at least a portion of said layer of 



14 



05/17/02 16:23 ©937 223 0724 KILLWORTH ET AL 121016/017 



Artotney Docket; MIO 0018 V2/96-n38.03 



10 



conductive matenal; said layer of dielectric niaterial including a pair of shoulders having hard 
mask material thereon, and said layer of hardjjmask material having a pair of facets; and 
an interconnect material in said via< 



6. A semiconductor device as claimed m claim 5, wherein said hard mask material is 
selected from the group consisting of tungsten, tungsten silicide, polycrystalline silicon, titanium, 
titanium nitride, titanium silicide^ and titanium-tungsten alloys. 



7. A semiconductor device as claimed ijn claim 5, wherein said hard mask material 
comprises a titanium-tungsten alloy. 



8. A semiconductor precursor device as claimed in claim 5, wherein said layer of conductive 
matter contacts at least a portion of said substrate. 



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